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Picosun, Sunale R-200, Advanced ALD Reactor, 200mm
Picosun, Sunale R-200, Advanced ALD Reactor, 200mm
Configured with three canisters and chemicals to deposit Ni, HfO, Ru and SiO, Al
Gases plumbed to the tool - Nitrogen
- Oxygen
- Argon
- Hydrogen
- Amonia
ALD chemical - Trimethylaluminum
- Hafnium Tetrachloride
- Bis(cyclopentadienyl) Nickel (II)
- Bis(ethylcyclpentadienyl) Ruthenium (II)
SUNALETM R-200 Advanced ALD System The ALD reactor has six separate inlets for precursor sources. It can accommodate up to twelve precursor sources. Maximum deposition temperature of the ALD reactor is 500 °C. Vacuum chamber (AISI304) AISI 304 stainless steel vessel with KF/CF connection flanges for RC-200 reaction chamber.
Reaction Chamber (AISI316L) RC-200 Chamber and lid with metal sealing surface. Customer specified chamber size up to 8”single Si wafer or smaller wafers (4”, 6”) and pieces Sample holder SH-200 Substrate holder for one up to 8” wafer or smaller wafers (4”, 6”) and pieces compatible with reaction chamber Advanced source control and electronics system Touch panel PC and electronics cabinet used for operating the ALD reactor with Advanced 12-source ALD software and electronics
PicosolutionTM 600 source system Cooled source systems for high vapor pressure liquid precursors (e.g. for TMA, TiCl4 and H2O). Maximum capacity 600mL. 3ea. Boosted PicohotTM 200 source system Heated source systems (up to 200 °C) for low vapor pressure metal precursors (e.g. for TEMAHf, TEMAZr). Suitable also for high vapor pressure chemicals. 2ea. PicohotTM 300 source system Heated source system (up to 300 °C) for low vapor pressure metal precursors (e.g. for HfCl4, ZrCl4). 1ea. PicogasesTM Connection Allows for the connection of an additional externally supplied compressed gas for use as an ALD precursor (e.g. NH3, O2). Includes plumbing, valves, and control of extra gas source.
SCADA application software revision: 2.00 PLC application software revision: 2.02
DOM:6/18/2013
Tool ID: CON015376
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